MT40A512M16TB-062E:R is a high-speed dynamic random access memory that is configured internally as 8 sets of DRAM in x16 configuration and 16 sets of DRAM in x4 and x8 configuration. DDR4 SDRAM uses the 8n refresh architecture to achieve high-speed operation. The 8n prefetch architecture is combined with an interface designed to transmit two data words per clock cycle on the I/O pins.
MT29F4G08ABBDAH4-IT:D The Micron NAND flash device includes an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transmit commands, addresses, and data.
MT25QL256ABA8E12-0AAT serial NOR flash memory has a low number of pins, is simple and easy to use, and is a simple solution suitable for encoding shadow applications; Can meet the needs of consumer electronics, industry, wired communication, and computing applications. This device adopts industry standard packaging, pin allocation, command set and chipset compatibility, making it easy to adopt in various designs. This can save valuable development time while ensuring compatibility with existing and future designs.Product specifications:
MT40A2G8SA-062E:F can accelerate product launch time and provide high-quality DRAM module solutions, whose reliability has been rigorously tested.
The BCM87400A1KRFBG adopts Broadcom's leading PAM-4 PHY technology platform and is the industry's first 400G PAM-4 PHY transceiver using nm CMOS technology.
XCZU67DR-L2FFVE1156I belongs to the Zynq-7000 series of XILINX, which is a high-performance programmable system level chip (SoC) that integrates ARM processors and FPGA (Field Programmable Gate Array) structures, suitable for various high-performance and high complexity applications such as embedded systems, multimedia processing, and wireless communication
